First principles modeling of magnetic random access memory devices (invited)

Butler, W H; Zhang, X; Schulthess, T C; Nicholson, D M; Oparin, A B; MacLaren, J M

doi:10.1063/1.369933

Title: First principles modeling of magnetic random access memory devices (invited)

Journal Article · Thu Apr 01 00:00:00 EST 1999 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.369933· OSTI ID:336642

Butler, W H; Zhang, X; Schulthess, T C; Nicholson, D M; Oparin, A B ^[1]; MacLaren, J M ^[2]

Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
Department of Physics, Tulane University, New Orleans, Louisiana 70018 (United States)

Giant magnetoresistance (GMR) and spin-dependent tunneling may be used to make magnetic random access memory devices. We have applied first-principles based electronic structure techniques to understand these effects and in the case of GMR to model the transport properties of the devices. {copyright} {ital 1999 American Institute of Physics.}

Cite

Export

Save

Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Oak Ridge Leadership Computing Facility (OLCF)

Sponsoring Organization:: USDOE Office of Science (SC)

OSTI ID:: 336642

Journal Information:: Journal of Applied Physics, Vol. 85, Issue 8; Other Information: PBD: Apr 1999

Country of Publication:: United States

Language:: English

References (17)

Spin-dependent scattering and giant magnetoresistance Butler, W. H.; Zhang, X. -G.; Nicholson, D. M. C. Journal of Magnetism and Magnetic Materials, Vol. 151, Issue 3 https://doi.org/10.1016/0304-8853(95)00507-2	journal	December 1995
Layer Korringa-Kohn-Rostoker electronic structure code for bulk and interface geometries MacLaren, J. M.; Crampin, S.; Vvedensky, D. D. Computer Physics Communications, Vol. 60, Issue 3 https://doi.org/10.1016/0010-4655(90)90035-Y	journal	October 1990
Magnetic structure and electronic transport in permalloy Nicholson, D. M. C.; Butler, W. H.; Shelton, W. A. Journal of Applied Physics, Vol. 81, Issue 8 https://doi.org/10.1063/1.364924	journal	April 1997
Magnetic structure of the spin valve interface Nicholson, D. M. C.; Butler, W. H.; Zhang, X. ‐G. Journal of Applied Physics, Vol. 76, Issue 10 https://doi.org/10.1063/1.358135	journal	November 1994
Order- N Multiple Scattering Approach to Electronic Structure Calculations Wang, Yang; Stocks, G. M.; Shelton, W. A. Physical Review Letters, Vol. 75, Issue 15 https://doi.org/10.1103/PhysRevLett.75.2867	journal	October 1995
Theory of transport in inhomogeneous systems and application to magnetic multilayer systems Butler, W. H.; Zhang, X. ‐G.; Nicholson, D. M. C. Journal of Applied Physics, Vol. 76, Issue 10 https://doi.org/10.1063/1.358136	journal	November 1994
Conductivity of metallic films and multilayers Zhang, X. -G.; Butler, W. H. Physical Review B, Vol. 51, Issue 15 https://doi.org/10.1103/PhysRevB.51.10085	journal	April 1995
First Principles Calculation of Electrical Conductivity and Giant Magnetoresistance of ColCu Multilayers Butler, W. H.; Zhang, X. -G.; Nicholson, D. M. C. MRS Proceedings, Vol. 384 https://doi.org/10.1557/PROC-384-291	journal	January 1995
First-principles calculations of electrical conductivity and giant magnetoresistance of Co‖Cu‖Co spin valves Butler, W. H.; Zhang, X. -G.; Nicholson, D. M. C. Physical Review B, Vol. 52, Issue 18 https://doi.org/10.1103/PhysRevB.52.13399	journal	November 1995
First principles calculations of electrical conductivity and giant magnetoresistance of periodic multilayers and spin valves (invited) Butler, W. H.; Zhang, X. -G.; Nicholson, D. M. C. Journal of Applied Physics, Vol. 79, Issue 8 https://doi.org/10.1063/1.362566	journal	January 1996
Giant Magnetoresistance from an Electron Waveguide Effect in Cobalt-Copper Multilayers Butler, W. H.; Zhang, X. -G.; Nicholson, D. M. C. Physical Review Letters, Vol. 76, Issue 17 https://doi.org/10.1103/PhysRevLett.76.3216	journal	April 1996
First-principles based semi-classical model for transport in magnetic layered structures Butler, W. H.; Zhang, X. -G.; MacLaren, J. M. IEEE Transactions on Magnetics, Vol. 34, Issue 4 https://doi.org/10.1109/20.706314	journal	July 1998
Spatial Variation of Currents and Fields Due to Localized Scatterers in Metallic Conduction Landauer, R. IBM Journal of Research and Development, Vol. 1, Issue 3 https://doi.org/10.1147/rd.13.0223	journal	July 1957
Theory of the negative magnetoresistance of ferromagnetic‐normal metallic multilayers (invited) Falicov, L. M.; Hood, Randolph Q. Journal of Applied Physics, Vol. 76, Issue 10 https://doi.org/10.1063/1.358205	journal	November 1994
Electronic structure of FM\|semiconductor\|FM spin tunneling structures Butler, W. H.; Zhang, X. -G.; Wang, Xindong Journal of Applied Physics, Vol. 81, Issue 8 https://doi.org/10.1063/1.364587	journal	April 1997
Spin-dependent tunneling in epitaxial systems: Band dependence of conductance MacLaren, J. M.; Butler, W. H.; Zhang, X. -G. Journal of Applied Physics, Vol. 83, Issue 11 https://doi.org/10.1063/1.367568	journal	June 1998
Spin-polarized electron tunneling Meservey, R.; Tedrow, P. M. Physics Reports, Vol. 238, Issue 4 https://doi.org/10.1016/0370-1573(94)90105-8	journal	March 1994

Similar Records

First principles calculations of electrical conductivity and giant magnetoresistance of periodic multilayers and spin valves (invited)

Journal Article · Mon Apr 01 00:00:00 EST 1996 · Journal of Applied Physics · OSTI ID:336642

Butler, W H; Zhang, X; Nicholson, D M; +2 more

Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)

Journal Article · Wed May 07 00:00:00 EDT 2014 · Journal of Applied Physics · OSTI ID:336642

Thomas, Luc; Jan, Guenole; Zhu, Jian; +15 more

Correlation of anomalous write error rates and ferromagnetic resonance spectrum in spin-transfer-torque-magnetic-random-access-memory devices containing in-plane free layers

Journal Article · Mon May 26 00:00:00 EDT 2014 · Applied Physics Letters · OSTI ID:336642

Evarts, Eric R.; Rippard, William H.; Pufall, Matthew R.; +1 more

Related Subjects

66 PHYSICS
36 MATERIALS SCIENCE
ELECTRONIC STRUCTURE
MAGNETORESISTANCE
MEMORY DEVICES
MAGNETIC MATERIALS
TUNNEL EFFECT

Title: First principles modeling of magnetic random access memory devices (invited)

Citation Formats

References (17)

Similar Records

Related Subjects