Hall effect of La{sub 2/3}(Ca,Pb){sub 1/3}MnO{sub 3} single crystals
- Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801-3080 (United States)
The Hall resistivity {rho}{sub xy} of a La{sub 2/3}(Ca,Pb){sub 1/3}MnO{sub 3} single crystal has been measured as a function of temperature and field. The overall behavior is similar to that observed previously in thin-film samples. At 5 K, {rho}{sub xy} is positive and linear in field, indicating that the anomalous contribution is negligible. However, the slope is small and, if a free carrier, single band model were used, the carrier density would be 2.4 holes per unit cell, even larger than the 0.85{endash}1.9 holes per cell that have been reported using thin-film data and far larger than the 0.33 holes per cell expected from the doping level. As the temperature is increased, a strong, negative contribution to {rho}{sub xy} appears, due to the anomalous contribution to the Hall effect. Making use of a detailed measurement of the magnetization M(B,T), we separate the ordinary ({proportional_to}B) and anomalous ({proportional_to}M) contributions. The anomalous contribution is negative and proportional to the zero-field resistivity {rho}{sub xx} below T{sub C}, indicating that magnetic skew scattering is the dominant mechanism in the metallic ferromagnetic regime. Far above T{sub C}, {rho}{sub xy} shows a negative slope, and is to be associated with the hopping of small polarons. Above T{sub C}, the Hall mobility is field independent despite the changes in {rho}{sub xx} and nonlinear {rho}{sub xy}. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 336639
- Journal Information:
- Journal of Applied Physics, Vol. 85, Issue 8; Other Information: PBD: Apr 1999
- Country of Publication:
- United States
- Language:
- English
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