The effects of 3 MeV proton and cobalt 60 gamma irradiations on light emission in silicon emitter-base bipolar junctions

Journal Article · Tue Dec 01 00:00:00 EST 1998 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.736533· OSTI ID:323960

Aboujja, S; Carlone, C ^[1]; Charles, J P ^[2]; Houdayer, A ^[3]

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1. Univ. de Sherbrooke, Quebec (Canada). Dept. de Physique
2. Centre Lorrain d`Optique et d`Electronique des Solides, Metz (France)
3. Univ. de Montreal, Quebec (Canada). Dept. de Physique

Bipolar junction transistors ST 2N2219A (npn) and 2N2905A (pnp) were exposed at room temperature to 3 MeV protons at fluences of 5{times}10{sup 8}, 4.6 {times}10{sup 9}, 5{times}10{sup 10}, 4.9{times}10{sup 11}, 5{times}10{sup 12} and 5{times}10{sup 13} p/cm{sup 2}, and to gamma irradiation at doses of 8.2, 16.4 and 24.6 Mrad (Si). The electroluminescence (EL) spectrum generated by direct and indirect polarization of the emitter-base junction was recorded in the spectral range 1.0 to 2.5 eV. The intensity of the EL signal decreases as a function of fluence in direct mode operation. This is attributed in part to the creation of radiation induced mid-gap defects which shorten the non-radiative lifetime. The intensity of the EL signal is independent of irradiation in reverse bias operation. It is concluded that light emission in reverse bias does not involve transitions to the ground state (valence band), nor to the first excited state (conduction band). This conclusion was confirmed with temperature dependent measurements in non-irradiated junctions. For forward bias operation, the emitted light is sensitive to junction temperature. The light intensity is independent of temperature in the case of reverse bias operation. The results are more consistent with the intraconduction bands model of light emission in reverse biased p-n junctions.

• OSTI ID: 323960
• Report Number(s): CONF-980705-; ISSN 0018-9499; TRN: 99:004480
• Journal Information: IEEE Transactions on Nuclear Science, Vol. 45, Issue 6Pt1; Conference: IEEE nuclear and space radiation effects conference, Newport Beach, CA (United States), 20-24 Jul 1998; Other Information: PBD: Dec 1998
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
JUNCTION TRANSISTORS
AMBIENT TEMPERATURE
PROTONS
RADIATION DOSES
GAMMA RADIATION
ELECTROLUMINESCENCE
PHYSICAL RADIATION EFFECTS
CRYSTAL DEFECTS
P-N JUNCTIONS