Analyses of compensation related defects in II-VI compounds
- Univ. of Bologna (Italy)
- Univ. Complutense, Madrid (Spain). Dept. de Fisica de Materiales
The deep levels present in semiconducting CdTe and semi-insulating (SI) CdTe:Cl and Cd{sub 0.8}Zn{sub 0.2}Te have been investigated by means of cathodoluminescence (CL), deep level transient spectroscopy (DLTS), photo-DLTS (PDLTS) and photo induced current transient spectroscopy (PICTS). PICTS and PDLTS can be applied to SI materials and allowed to determine whether the observed deep levels are hole or electron traps. Among the observed deep centers, the authors have focused their attention on those involved in the compensation process such as the so called center A and the deep traps located near midgap. They have identified a deep acceptor, labelled H, and a deep donor, labelled E, the latter is peculiar to CdTe:Cl and can be a good candidate for the deep donor level needed to explain the compensation process in SI CdTe:Cl.
- OSTI ID:
- 323855
- Report Number(s):
- CONF-971201-; TRN: 99:004387
- Resource Relation:
- Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: 1998; Related Information: Is Part Of Semiconductors for room-temperature radiation detector applications 2; James, R.B. [ed.] [Sandia National Labs., Livermore, CA (United States)]; Schlesinger, T.E. [ed.] [Carnegie Mellon Univ., Pittsburgh, PA (United States)]; Siffert, P. [ed.] [Lab. PHASE/CNRS, Strasbourg (France)]; Dusi, W. [ed.] [Inst. TESRE/CNR, Bologna (Italy)]; Squillante, M.R. [ed.] [Radiation Monitoring Devices, Inc., Watertown, MA (United States)]; O`Connell, M. [ed.] [Dept. of Energy, Washington, DC (United States)]; Cuzin, M. [ed.] [LETI/CEA, Grenoble (France)]; PB: 681 p.; Materials Research Society symposium proceedings, Volume 487
- Country of Publication:
- United States
- Language:
- English
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