The perspectives of high-rate low frequency a-Si:H films deposition: Solar cell application and stability control
- Moscow Inst. of Electronic Technology (Russian Federation)
- UniSil Corp., Mountain View, CA (United States)
The perspectives for solar cell application of structural inhomogeneous a-Si:H films deposited at high growth rates ({approximately}10--20 {angstrom}/s) from 100% SiH{sub 4} in low frequency (LF) 55kHz glow discharge plasma have been investigated. In this case the influence of structural inhomogeneity on dark dc and photoconductivities and light-induced defect generation kinetics (Staebler-Wronski effect, SWE) in a-Si:H films have been studied. The microstructure of films was investigated by IR spectroscopy analysis Microstructural parameter R = [SiH{sub 2}]/([SiH] + [SiH{sub 2}]), was used for the quantitative characterization of structural inhomogeneity in the material bulk. It was found that Fermi level position is fixed by deep defect states and does not depend on microstructure parameter R. The comparative analysis of photoconductivity modeling and ESR measurements have shown that recombination in a-Si:H films is controlled by neutral dangling bonds and doesn`t depend on parameter R. Meanwhile it was found that the kinetics of light-induced defect generation was controlled by SiH{sub 2} or clustered SiH groups content. Thus, the above results allow to perform an independent control of stability and electronic properties of a-Si:H films deposited in LF glow discharge plasma.
- Sponsoring Organization:
- Nederlandse Centrale Organisatie voor Toegepast Natuurwetenschappelijk Onderzoek, The Hague (Netherlands)
- OSTI ID:
- 323678
- Report Number(s):
- CONF-971201-; TRN: IM9911%%292
- Resource Relation:
- Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: 1998; Related Information: Is Part Of Thin-film structures for photovoltaics; Jones, E.D. [ed.] [Sandia National Labs., Albuquerque, NM (United States)]; Kalejs, J. [ed.] [ASE Americas Inc., Billerica, MA (United States)]; Noufi, R.; Sopori, B. [eds.] [National Renewable Energy Lab., Golden, CO (United States)]; PB: 325 p.; Materials Research Society symposium proceedings, Volume 485
- Country of Publication:
- United States
- Language:
- English
Similar Records
Hydrogen in a-Si:H deposited by 55 kHz PECVD
Light-induced structural changes and their correlation to metastable defect creation in intrinsic hydrogenated amorphous silicon films