A study of the CdS/CuIn(Ga)Se{sub 2} interface in thin film solar cells
Conference
·
OSTI ID:323650
- National Renewable Energy Lab., Golden, CO (United States)
In this paper the authors describe research efforts directed towards the understanding of the CdS/CuInGaSe{sub 2} junctions and, specifically, the interaction of the chemical bath with the CuInGaSe{sub 2} (CIGS). They find that Cd and S diffuse into the absorber during the CdS growth. Heating the absorbers in Cd partial baths resulted in a significant improvement in the ZnO/CIGS device properties. Photoluminescence measurements indicate that the effect of Cd is very similar to that of chemical bath deposition (CBD) CdS.
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC36-83CH10093
- OSTI ID:
- 323650
- Report Number(s):
- CONF-971201-; TRN: IM9911%%264
- Resource Relation:
- Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: 1998; Related Information: Is Part Of Thin-film structures for photovoltaics; Jones, E.D. [ed.] [Sandia National Labs., Albuquerque, NM (United States)]; Kalejs, J. [ed.] [ASE Americas Inc., Billerica, MA (United States)]; Noufi, R.; Sopori, B. [eds.] [National Renewable Energy Lab., Golden, CO (United States)]; PB: 325 p.; Materials Research Society symposium proceedings, Volume 485
- Country of Publication:
- United States
- Language:
- English
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