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Title: A study of the CdS/CuIn(Ga)Se{sub 2} interface in thin film solar cells

Conference ·
OSTI ID:323650
; ; ; ; ; ;  [1]
  1. National Renewable Energy Lab., Golden, CO (United States)

In this paper the authors describe research efforts directed towards the understanding of the CdS/CuInGaSe{sub 2} junctions and, specifically, the interaction of the chemical bath with the CuInGaSe{sub 2} (CIGS). They find that Cd and S diffuse into the absorber during the CdS growth. Heating the absorbers in Cd partial baths resulted in a significant improvement in the ZnO/CIGS device properties. Photoluminescence measurements indicate that the effect of Cd is very similar to that of chemical bath deposition (CBD) CdS.

Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
AC36-83CH10093
OSTI ID:
323650
Report Number(s):
CONF-971201-; TRN: IM9911%%264
Resource Relation:
Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: 1998; Related Information: Is Part Of Thin-film structures for photovoltaics; Jones, E.D. [ed.] [Sandia National Labs., Albuquerque, NM (United States)]; Kalejs, J. [ed.] [ASE Americas Inc., Billerica, MA (United States)]; Noufi, R.; Sopori, B. [eds.] [National Renewable Energy Lab., Golden, CO (United States)]; PB: 325 p.; Materials Research Society symposium proceedings, Volume 485
Country of Publication:
United States
Language:
English