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Title: Progress toward a microsecond duration, repetitive, intense-ion beam accelerator

Conference ·
OSTI ID:323597
;  [1]; ;  [2];  [3];  [4]
  1. Los Alamos National Lab., NM (United States)
  2. DuPont, Los Alamos, NM (United States)
  3. Cornell Univ., Ithaca, NY (United States)
  4. Univ. of California, San Diego, CA (United States)

A number of intense ion beam applications are emerging requiring repetitive high-average-power beams. These applications include ablative deposition of thin films, rapid melt and resolidification for surface property enhancement, advanced diagnostic neutral beams for the next generation of Tokamaks, and intense pulsed-neutron sources. The authors are developing a 250 keV, 15 kA, 1 {micro}s duration, 1--30 Hz intense-ion beam accelerator called CHAMP (Continuous High Average-Power Microsecond Pulser). The accelerator will use a magnetically insulated extraction diode in ballistically focused geometry. The 450 cm{sup 2} active plasma anode (MAP diode) can utilize any gaseous species. Gas is supplied from a puff valve located on the system axis and is ducted through a radial flow channel. The anode plasma is formed by currents induced in the gas by a fast-rising two-turn, flat, spiral wound coil with four parallel sets of windings. The insulating transverse magnetic field will be generated by two magnetic field coils on the grounded cathode focusing cones. The authors use a set of parallel lumped-element Blumlein circuits and a step-up pulse transformer to supply the diode acceleration voltage. Hardware for first anode plasma generation tests is being assembled and results from characterization of the anode plasma source is presented.

Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
W-7405-ENG-36
OSTI ID:
323597
Report Number(s):
CONF-970559-; TRN: 99:004312
Resource Relation:
Conference: 24. IEEE international conference on plasma science, San Diego, CA (United States), 19-23 May 1997; Other Information: PBD: 1997; Related Information: Is Part Of IEEE conference record -- Abstracts; PB: 354 p.
Country of Publication:
United States
Language:
English