Nonuniform oxide charge and paramagnetic interface traps in high-temperature annealed Si/SiO{sub 2}/Si structures
- Sandia National Laboratories, Albuquerque, New Mexico 87185-1349 (United States)
- CNET-France Telecom, B.P. 98, 38243 Meylan (France)
Trivalent silicon {ital P}{sub {ital b}0} and {ital P}{sub {ital b}1} defects were identified at both the top Si(100)/buried-SiO{sub 2} and buried-SiO{sub 2}/bottom-Si(100) interfaces in high-temperature (1320{degree}C) annealed Si/SiO{sub 2}/Si struc- tures. The paramagnetic defects are generated by annealing in a flow of pure nitrogen (N{sub 2}) or forming gas [N{sub 2}H{sub 2}; 95:5 (by volume)] at 550{degree}C. In addition, the forming-gas anneal also generated positive charge in the buried oxides; significant lateral nonuniformities in the buried oxide charge density were observed following this anneal. These macroscopic inhomogeneities may be linked to previous reports of homogeneity related problems involving the SIMOX buried oxide, such as early breakdown and etch pits, suggesting that these types of measurements may be useful as nondestructive screens of SIMOX wafer quality. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 279884
- Journal Information:
- Applied Physics Letters, Vol. 68, Issue 15; Other Information: PBD: Apr 1996
- Country of Publication:
- United States
- Language:
- English
Similar Records
Paramagnetic point defects in amorphous thin films of SiO{sub 2} and Si{sub 3}N{sub 4}: An update
Paramagnetic point defects in amorphous thin films of SiO{sub 2} and Si{sub 3}N{sub 4}: Updates and additions