Coimplantation of carbon and group II acceptors in GaAs
- Electrical Computer Engineering Department, University of California, San Diego, La Jolla, California 92093-0407 (United States)
- Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
- Department of Physics and Materials Science, City University of Hong Kong (Hong Kong)
Coimplantation of carbon and one of the group II acceptors Mg, Zn, or Cd, was performed in GaAs using doses of 5{times}10{sup 14} cm{sup {minus}2}, and the resulting {ital p}-type electrical activity was studied. Carbon and group II coimplantation offers a means of maintaining the III{endash}V stoichiometry, which is known to be beneficial for both carbon and group II activation. The group II implantation profiles show reduced diffusivity from the balance in stoichiometry the carbon coimplantation provides. The group II elements Zn and Cd create substantial implantation damage and therefore help assist carbon activation by supplying the necessary abundance of As vacancies. The Mg coimplantation, because of the light mass of the ion, does not create a significant amount of lattice damage at this dose and consequently the implanted carbon remains inactive, which results in reduced conductivity. This investigation differs from past group III and carbon coimplantation studies because both of the coimplanted species, the group II and carbon, contribute to {ital p}-type conductivity as well as help to maintain the stoichiometry. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 278626
- Journal Information:
- Applied Physics Letters, Vol. 68, Issue 8; Other Information: PBD: Feb 1996
- Country of Publication:
- United States
- Language:
- English
Similar Records
Coimplantation and electrical activity of C in GaAs: Stoichiometry and damage effects
Coimplantation of carbon implanted GaAs: Energy and dose rate observations