Determination of the valence-band offset of CdS/CIS solar cell devices by target factor analysis
- National Renewable Energy Lab., Golden, CO (United States)
X-ray photoemission spectroscopy (XPS) is used to determine and compare the valence-band offsets ({Delta}E{sub v}) for CdS grown by chemical bath deposition on single-crystal and thin-film CuInSe{sub 2} (CIS). The thin-film CIS device was suitable for photovoltaic energy production. By sputtering through the CdS/CIS interface and reducing the depth profile with target factor analysis, the magnitude of {Delta}E{sub v} was determined to be {Delta}E{sub v} = 1.06 {+-} 0.15 eV for both the single-crystal and thin-film interfaces. This determination of {Delta}E{sub v} is about 0.25 eV larger than many previously reported estimations CdS grown by physical vapor deposition on CIS and helps explain the record performance of CdS/CIS photovoltaic devices.
- OSTI ID:
- 276863
- Report Number(s):
- CONF-960513-; TRN: IM9636%%538
- Resource Relation:
- Conference: 25. photovoltaic solar energy conference, Washington, DC (United States), 13-17 May 1996; Other Information: PBD: 1996; Related Information: Is Part Of NREL preprints for the photovoltaic specialists conference of IEEE twenty-five; Gwinner, D. [ed.]; PB: 172 p.
- Country of Publication:
- United States
- Language:
- English
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