Sub-100 nm pattern formation using a novel lithography with SiN{sub x} resist by focused ion beam exposure and dry-etching development
- Univ. of Tokyo (Japan)
A novel lithography applicable to in situ processing is proposed, where plasma-chemical-vapor-deposited (PCVD) SiN{sub x} is used as a resist, exposure is by Ga focused ion beam (Ga-FIB) implantation, and CF{sub 4} dry etching is used for development. The Ga-implanted SiN{sub x} film acts as a negative resist for CF{sub 4} dry-etching development when the ion dose exceeds 10{sup 16} cm{sup -2}. The imaging contrast appears to be 4.0 when the acceleration voltage in the FIB exposure is 40 kV and chemical dry-etching development is employed. Very fine resist patterns of 50 nm are obtained using the finest beam available with our FIB system in combination with anisotropic reactive ion etching development. The substrate damage due to FIB exposure is not significant thanks to the presence of the SiN{sub x} resist. GaAs substrates are successfully dry-etched with deep and anisotropic profiles using SiN{sub x} masks fabricated by this lithography method. 23 refs., 9 figs.
- OSTI ID:
- 249828
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 11, Issue 2; Other Information: PBD: Mar-Apr 1993
- Country of Publication:
- United States
- Language:
- English
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