Photoelectric properties of polycrystalline Cd{sub x}Hg{sub 1-x}Te layers on sapphire
- Inst. of Semiconductor Physics, Kiev (Ukraine); and others
Owing to photosensitivity in the ranges 3-5 and 8-14 {mu}m, Cd{sub x}Hg{sub l-x}Te (MCT) narrow-gap semiconductors are the most efficient materials for IR detectors, sensors, and other electrooptic devices. Both bulk crystals and epitaxial layers of MCT solid solutions are used. Because of some difficulty in growing bulk crystals (high pressure of mercury vapor, incongruent solidification, expensive equipment, etc.), epitaxial growth of this material is now the focus of researchers attention. To prepare a perfect structure, it is important to select a substrate material whose unit-cell parameter and thermal expansion coefficient match those of the layer. Owing to extensive studies, alternative materials, such as GaAs, Al{sub 2}O{sub 3} (sapphire), and Si, which are less expensive and can be prepared as large-area substrates, are now finding increased use along with traditional CdTe and ZnCdTe single-crystal substrates. For example, Johnston et al. demonstrated the possibility of growing epitaxial MCT layers for mid-IR detectors on sapphire substrates. In this context, it is interesting to study the photoelectric properties of MCT layers grown on sapphire; these films are promising for use in {open_quotes}warm{close_quotes} mid-IR photodetectors. In this work, we report measurements of steady-state and pulsed photoconductivity in polycrystalline MCT layers on sapphire.
- OSTI ID:
- 244239
- Journal Information:
- Inorganic Materials, Vol. 31, Issue 10; Other Information: PBD: Oct 1995; TN: Translated from Neorganicheskie Materialy; 31: No. 10, 1335-1337(1995)
- Country of Publication:
- United States
- Language:
- English
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