Electric and photoelectric properties of InAs photosensitive cells
- Moscow Inst. of Steel and Alloys (Russian Federation); and others
Earlier we showed that InAs is a promising material for portable IR imagers employing arrays of charge coupled devices (CCD). The most important element of the array cell is the p-n junction. Electric and photoelectric properties of the p-n junction determine the characteristics of the array. In this work, we studied characteristics of photodiodes with autoepitaxial p{sup +}-n structure and passivating dielectric layers of anodic oxide and Si{sub 3}N{sub 4}. We also optimized the carrier concentration in the p{sup +}-layer and n-substrate and the thickness of the dielectric layers in order to increase the operating temperature of the CCD array, without affecting the signal-to-noise ratio in the signal detection mode. The temperature dependence of the differential resistance Rd of the diode; this dependence allows one to determine the generation regions and mechanisms of the reverse current of the diode I{sub rev}. The reverse current of the diode I{sub rev}, at zero bias is associated with two main processes: generation in the space-charge region (SCR) of the p-n junction I{sub SCR} and thermal generation in the neutral bulk I{sub bulk}. The corresponding contributions to the reverse current exhibit different temperature dependences.
- OSTI ID:
- 244224
- Journal Information:
- Inorganic Materials, Vol. 31, Issue 10; Other Information: PBD: Oct 1995; TN: Translated from Neorganicheskie Materialy; 31: No. 10, 1260-1263(1995)
- Country of Publication:
- United States
- Language:
- English
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