Transient microwave bandwidth measurements of illuminated silicon switches for optical pulse-shape control of laser-fusion drivers
- Univ. of Rochester, NY (United States)
The microwave transmission properties of a high-purity ({>=}40 k{Omega}{center_dot}cm) single-crystal-silicon, photoconductive (PC) switch were measured while the switch was optically activated. The switch was 2.3 mm wide (the width of the microstrip electrode), 2 mm long, and 0.5 mm thick with a 0.5-mm photoconductive gap and was mounted in a 50-{Omega} microstrip transmission line. The switch was irradiated uniformly with a 150-ns FWHM pulse from a ND:YAG laser (wavelength = 1.064 {micro}m). The insertion loss of the optically activated PC switch was a nearly constant {minus}0.7 dB across the measurement system bandwidth (9 GHz). Under these illumination conditions, the switch exhibited negligible bandwidth limitations. The microstrip structure by itself had an insertion loss that increased from {minus}0.4 dB at 1 GHz to {minus}1.4 dB at 9 GHz.
- DOE Contract Number:
- FC03-92SF19460
- OSTI ID:
- 234217
- Report Number(s):
- CONF-9505264-; ISBN 0-8194-1997-4; TRN: IM9624%%258
- Resource Relation:
- Conference: 1. annual solid-state lasers for application to inertial confinement fusion meeting, Monterey, CA (United States), 30 May - 2 Jun 1995; Other Information: PBD: 1995; Related Information: Is Part Of First annual international conference on solid state lasers for application to inertial confinement fusion; Andre, M.; Powell, H.T. [eds.]; PB: 797 p.; Proceedings/SPIE, Volume 2633
- Country of Publication:
- United States
- Language:
- English
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