Perspectives and progress on wurtzite ferroelectrics: Synthesis, characterization, theory, and device applications

Casamento, Joseph; Baksa, Steven M.; Behrendt, Drew; Calderon, Sebastian; Goodling, Devin; Hayden, John; He, Fan; Jacques, Leonard; Lee, Seung Hoon; Smith, Walter; Suceava, Albert; Tran, Quyen; Zheng, Xiaojun; Zu, Rui; Beechem, Thomas; Dabo, Ismaila; Dickey, Elizabeth C.; Esteves, Giovanni; Gopalan, Venkatraman; Henry, Michael David; Ihlefeld, Jon F.; Jackson, Thomas N.; Kalinin, Sergei V.; Kelley, Kyle P.; Liu, Yongtao; Rappe, Andrew M.; Redwing, Joan; Trolier-McKinstry, Susan; Maria, Jon-Paul

doi:10.1063/5.0185066

Title: Perspectives and progress on wurtzite ferroelectrics: Synthesis, characterization, theory, and device applications

Journal Article · Tue Feb 20 00:00:00 EST 2024 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0185066· OSTI ID:2326287

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Pennsylvania State Univ., University Park, PA (United States)
Univ. of Pennsylvania, Philadelphia, PA (United States)
Carnegie Mellon Univ., Pittsburgh, PA (United States)
Purdue Univ., West Lafayette, IN (United States)
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Univ. of Virginia, Charlottesville, VA (United States)
Univ. of Tennessee, Knoxville, TN (United States)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Wurtzite ferroelectrics are an emerging material class that expands the functionality and application space of wide bandgap semiconductors. Promising physical properties of binary wurtzite semiconductors include a large, reorientable spontaneous polarization, direct band gaps that span from the infrared to ultraviolet, large thermal conductivities and acoustic wave velocities, high mobility electron and hole channels, and low optical losses. The ability to reverse the polarization in ternary wurtzite semiconductors at room temperature enables memory and analog type functionality and quasi-phase matching in optical devices and boosts the ecosystem of wurtzite semiconductors, provided the appropriate combination of properties can be achieved for any given application. In this article, advances in the design, synthesis, and characterization of wurtzite ferroelectric materials and devices are discussed. Highlights include: the direct and quantitative observation of polarization reversal of ~135 μC/cm² charge in Al_1-xB_xN via electron microscopy, Al_1-xB_xN ferroelectric domain patterns poled down to 400 nm in width via scanning probe microscopy, and full polarization retention after over 1000 h of 200 °C baking and a 2× enhancement relative to ZnO in the nonlinear optical response of Zn_1-xMg_xO. In conclusion, the main tradeoffs, challenges, and opportunities in thin film deposition, heterostructure design and characterization, and device fabrication are overviewed.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Pennsylvania State Univ., University Park, PA (United States); Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES); Defense Advanced Research Projects Agency (DARPA)

Grant/Contract Number:: NA0003525; SC0021118; W911NF-20-2-0274; HR0011-20-9-0047; AC05-00OR22725

OSTI ID:: 2326287

Alternate ID(s):: OSTI ID: 2326295

Report Number(s):: SAND-2024-03398J

Journal Information:: Applied Physics Letters, Vol. 124, Issue 8; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Dawn of nitride ferroelectric semiconductors: from materials to devices Wang, Ping; Wang, Ding; Mondal, Shubham Semiconductor Science and Technology, Vol. 38, Issue 4 https://doi.org/10.1088/1361-6641/acb80e	journal	March 2023
Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory Liu, Xiwen; Wang, Dixiong; Kim, Kwan-Ho Nano Letters, Vol. 21, Issue 9 https://doi.org/10.1021/acs.nanolett.0c05051	journal	April 2021
Ultrathin Al_1−xSc_xN for Low‐Voltage‐Driven Ferroelectric‐Based Devices Schönweger, Georg; Islam, Md Redwanul; Wolff, Niklas physica status solidi (RRL) – Rapid Research Letters, Vol. 17, Issue 1 https://doi.org/10.1002/pssr.202200312	journal	October 2022
1.7-kV and 0.55-$\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability Nomoto, Kazuki; Song, Bo; Hu, Zongyang IEEE Electron Device Letters, Vol. 37, Issue 2 https://doi.org/10.1109/LED.2015.2506638	journal	February 2016
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Ferroelectric YAlN grown by molecular beam epitaxy Wang, Ding; Mondal, Shubham; Liu, Jiangnan Applied Physics Letters, Vol. 123, Issue 3 https://doi.org/10.1063/5.0159562	journal	July 2023
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Mechanism of polarization switching in wurtzite-structured zinc oxide thin films Konishi, Ayako; Ogawa, Takafumi; Fisher, Craig A. J. Applied Physics Letters, Vol. 109, Issue 10 https://doi.org/10.1063/1.4962440	journal	September 2016
Extrinsic contributions to the dielectric and pyroelectric properties of Pb _0.99 [(Zr _0.52 Ti _0.48 ) _0.98 Nb _0.02 ]O ₃ thin films on Si and Ni substrates Coleman, K.; Shetty, S.; Hanrahan, B. Journal of Applied Physics, Vol. 128, Issue 11 https://doi.org/10.1063/5.0014405	journal	September 2020
Anomalously abrupt switching of wurtzite-structured ferroelectrics: simultaneous non-linear nucleation and growth model Yazawa, Keisuke; Hayden, John; Maria, Jon-Paul Materials Horizons, Vol. 10, Issue 8 https://doi.org/10.1039/D3MH00365E	journal	January 2023
Pulsed E-/D-Mode Switchable GaN HEMTs With a Ferroelectric AlScN Gate Dielectric Yang, Jeong Yong; Oh, Seung Yoon; Yeom, Min Jae IEEE Electron Device Letters, Vol. 44, Issue 8 https://doi.org/10.1109/LED.2023.3287913	journal	August 2023
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Polarity Inversion of Aluminum Nitride Thin Films by using Si and MgSi Dopants Anggraini, Sri Ayu; Uehara, Masato; Hirata, Kenji Scientific Reports, Vol. 10, Issue 1 https://doi.org/10.1038/s41598-020-61285-8	journal	March 2020
Ferroelectric Polarization Aided Low Voltage Operation of 3D NAND Flash Memories Ham, Ilsik; Jeong, Youngseok; Baik, Seung Jae Electronics, Vol. 10, Issue 1 https://doi.org/10.3390/electronics10010038	journal	December 2020

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