Comprehensive numerical modeling of vertical-cavity surface-emitting lasers

Journal Article · Mon Apr 01 00:00:00 EST 1996 · IEEE Journal of Quantum Electronics

DOI:https://doi.org/10.1109/3.488833· OSTI ID:231092

Hadley, G R; Lear, K L; Warren, M E; Choquette, K D ^[1]; Scott, J W ^[2]; Corzine, S W ^[3]

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1. Sandia National Labs., Albuquerque, NM (United States)
2. Optical Concepts, Inc., Lompoc, CA (United States)
3. Univ. of California, Santa Barbara, CA (United States)

The authors present a comprehensive numerical model for vertical-cavity surface-emitting lasers that includes all major processes affecting cw operation of axisymmetric devices. In particular, the model includes a description of the 2-D transport of electrons and holes through the cladding layers to the quantum well(s), diffusion and recombination of these carriers within the wells, the 2-D transport of heat throughout the device, and a multilateral-mode effective index optical model. The optical gain acquired by photons traversing the quantum wells is computed including the effects of strained band structure and quantum confinement. The authors employ the model to predict the behavior of higher-order lateral modes in proton-implanted devices and to provide an understanding of index-guiding in devices fabricated using selective oxidation.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 231092
• Journal Information: IEEE Journal of Quantum Electronics, Vol. 32, Issue 4; Other Information: PBD: Apr 1996
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
SEMICONDUCTOR LASERS
MATHEMATICAL MODELS
LASER CAVITIES
NUMERICAL SOLUTION
CHARGED-PARTICLE TRANSPORT
CHARGE CARRIERS
HEAT TRANSFER
USES