Thermally stable metallizations on polycrystalline diamond films
- Univ. of Dayton Research Institute, OH (United States)
- Aero Propulsion and Power Directorate, Wright-Patterson Air Force Base, OH (United States)
Present work focused on the electrical properties and thermal stability of Au, Ni/W, and Al/W contacts to p-type polycrystalline diamond films, and Ni/Ti/W contact to {open_quotes}n-type{close_quotes} polycrystalline diamond films. The Au, Ni/W, and Al/W contacts to p-type diamond films illustrate perfect ohmic behavior in the as-deposited condition. The contact resistivity is in the range of 10{sup 4}ohm-cm {sup 2} determined by TLM. On the other hand, Ni/Ti/W contact to {open_quotes}n-type{close_quotes} diamond film shows very large resistance with low leakage current in the as-deposited condition. All these metallization systems exhibit good thermal stability. The contact resistance of the Al/W contact to p-type diamond decreased slightly, however, little change in I-V characteristics was observed for Ni/W and Ni/Ti/W metallizations after annealed at 650{degrees}C for 78 hours.
- OSTI ID:
- 230037
- Report Number(s):
- CONF-950840-; TRN: 96:000433-0035
- Resource Relation:
- Conference: International conference on applications of diamond films and related materials, Gaithersburg, MD (United States), 21-24 Aug 1995; Other Information: PBD: 1995; Related Information: Is Part Of Applications of diamond films and related materials: Third international conference; Feldman, A.; Yarbrough, W.A.; Murakawa, Masao; Tzeng, Yonhua; Yoshikawa, Masanori [eds.]; PB: 973 p.
- Country of Publication:
- United States
- Language:
- English
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