Noise analysis of optimized Ge/Ge{sub 1−x}Sn{sub x}/Ge p–n–p heterojunction phototransistors for long-wavelength optical receivers
- National Institute of Technology Delhi, Department of Electronics and Communication Engineering (India)
Present literature investigates noise analysis and optimal design for Ge/Ge{sub 1−x}Sn{sub x}/Ge based p–n–p heterojunction phototransistors (HPT) for long-wavelength optical receivers. We calculate gain, noise powers, signal-to-noise ratio, absorption coefficient and optical responsivity of proposed GeSn-based HPT and investigate their dependence on various structural parameters to optimize the design. The proposed HPT incorporates Ge{sub 1−x}Sn{sub x} alloy in the base layer as the active layer, allow to extend the photo detection range from near infrared to mid-infrared to achieve a wide range of detection. The results show that the signal-to-noise ratio (SNR) is strongly dependent on the operating frequency and the introduction of Sn in the base layer can improve the signal-to-noise ratio in the high-frequency region. The calculated results also show that even in the presence of small defects and misfit dislocations at the heterointerfaces, high SNR is still achievable for the proposed structure.
- OSTI ID:
- 22950395
- Journal Information:
- Optical and Quantum Electronics, Vol. 51, Issue 2; Other Information: Copyright (c) 2019 Springer Science+Business Media, LLC, part of Springer Nature; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 0306-8919
- Country of Publication:
- United States
- Language:
- English
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