Effect of Nickel and Copper Introduced at Room Temperature on the Recombination Properties of Extended Defects in Silicon

Journal Article · Mon Apr 15 00:00:00 EDT 2019 · Semiconductors (Woodbury, N.Y., Print)

DOI:https://doi.org/10.1134/S1063782619040225· OSTI ID:22945042

Yarykin, N. A.; Yakimov, E. B. ^[1]

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1. Institute of Microelectronics Technology and Ultra-High-Purity Materials, Russian Academy of Sciences (Russian Federation)

The change in the recombination properties of individual dislocations and dislocation trails in silicon due to the diffusion of nickel and copper during chemical-mechanical polishing at room temperature is studied by the electron-beam- and light-beam-induced current techniques. It is found that the introduction of nickel results in an increase in the recombination activity of both dislocations and dislocation trails. The introduction of copper does not induce any substantial change in the contrast of extended defects.

• OSTI ID: 22945042
• Journal Information: Semiconductors (Woodbury, N.Y., Print), Vol. 53, Issue 4; Other Information: Copyright (c) 2019 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COPPER
DEFECTS
DIFFUSION
DISLOCATIONS
ELECTRON BEAMS
MECHANICAL POLISHING
NICKEL
RECOMBINATION
SILICON
TEMPERATURE RANGE 0273-0400 K