Thermoelectric and Galvanomagnetic Properties of Layered n-Bi2-xSbxTe3-ySey Films
- Ioffe Institute (Russian Federation)
The thermoelectric properties in the temperature range 4.2–300 K and magnetoresistance oscillations in strong magnetic fields at low temperatures are studied in nanostructured layered films of topological thermoelectric materials n-Bi2-xSbxTe3-ySey. It is shown that the thermoelectric figure of merit in layered n-Bi2-xSbxTe3-ySey films is larger than that in the bulk material due both to an increase in the Seebeck coefficient below room temperature and to a decrease in the thermal conductivity and its weaker temperature dependence. Analysis of the magnetoresistance oscillations is used to determine the parameters of the topological surface states of Dirac fermions and estimate their influence on the thermoelectric properties.
- OSTI ID:
- 22945018
- Journal Information:
- Semiconductors, Vol. 53, Issue 5; Other Information: Copyright (c) 2019 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
The Shubnikov-de Haas effect and thermoelectric properties of Tl-doped Sb{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3}
Effects of Se substitution on the thermoelectric performance of n-type Co{sub 4}Sb{sub 11.3}Te{sub 0.7−x}Se{sub x} skutterudites
Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BISMUTH COMPLEXES
FERMIONS
MAGNETIC FIELDS
MAGNETORESISTANCE
NANOSTRUCTURES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
THERMAL CONDUCTIVITY
THERMOELECTRIC MATERIALS
THERMOELECTRIC PROPERTIES
THIN FILMS