Emission Kinetics of Surface (Bi)Excitons in ZnO Thin Films

Journal Article · Fri Mar 15 00:00:00 EDT 2019 · Physics of the Solid State

DOI:https://doi.org/10.1134/S1063783419030041· OSTI ID:22925343

Akopyan, I. Kh.; Novikov, B. V. ^[1]; Talalaev, V. G. ^[2]; Tomm, J. W. ^[3]; Schilling, J. ^[2]

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1. St. Petersburg State University (Russian Federation)
2. Martin-Luther University, Centre for Innovation Competence SiLi-nano (Germany)
3. Max Born Institute for Nonlinear Optics and Short Pulse Spectroscopy (Germany)

The kinetics of near-edge photoluminescence (PL) in ZnO nanofilms prepared by the atomic layer deposition has been investigated. It is established that the kinetics of near-edge PL in 4-nm films is determined to a great extent by surface 2D-exciton (SX) and biexciton (SXX) complexes. The contribution from surface biexcitons is estimated based on a photostimulated change in the surface potential in ZnO films with different thicknesses. Ultrafast dynamics of surface biexcitons in thin films are revealed. It is shown that biexcitons localized near the surface have the shortest radiative lifetime (less than 100 ps) among all bound exciton complexes, which is explained by the large oscillator strength.

• OSTI ID: 22925343
• Journal Information: Physics of the Solid State, Vol. 61, Issue 3; Other Information: Copyright (c) 2019 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7834
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COMPLEXES
DEPOSITION
EXCITONS
KINETICS
NANOFILMS
OSCILLATOR STRENGTHS
PHOTOLUMINESCENCE
SURFACE POTENTIAL
THICKNESS
ZINC OXIDES