Anomalous Hall Effect in Epitaxial Ni–Mn–Ga Thin Films Grown on MgO(001) Substrate during the Martensitic Transformation
- Northeastern University, Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering (China)
- Taiyuan University of Science and Technology, The Key Laboratory of Magnetic and Electric Functional Materials and Applications of Shanxi Province (China)
Epitaxial Ni–Mn–Ga thin films had been grown on MgO (001) by DC magnetron sputtering. And the anomalous Hall effect (AHE), microstructures, magnetism, and magnetoresistance (MR) were investigated. The AHE was measured in the film of Ni{sub 47.8}Mn{sub 30.8}Ga{sub 21.4} during the martensitic transformation. Meanwhile, the mechanism of the AHE was explained which indicates that the hall resistivity measured in our sample is primarily determined by AHE. The microstructures of the austenite phase and 7M martensite plates at room temperature had been observed on the film of Ni{sub 46.7}Mn{sub 31.7}Ga{sub 21.6} and Ni{sub 47.8}Mn{sub 30.8}Ga{sub 21.4}, respectively. Magnetic measurements reveal that all films possessed the martensitic transformation during the heating and cooling processes. In addition, the MR showed a negative value during the martensitic transformation which is mainly due to the reduction of spin-dependent scattering.
- OSTI ID:
- 22919527
- Journal Information:
- Journal of Superconductivity and Novel Magnetism, Vol. 32, Issue 10; Conference: ICSM2018: 6. International Conference on Superconductivity and Magnetism, Antalya (Turkey), 29 Apr - 4 May 2018; Other Information: Copyright (c) 2019 Springer Science+Business Media, LLC, part of Springer Nature; Country of input: International Atomic Energy Agency (IAEA); ISSN 1557-1939
- Country of Publication:
- United States
- Language:
- English
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