Transversely diode-pumped Q-switched Nd : YAG laser with injection of radiation from a single-frequency semiconductor laser

Journal Article · Sat Oct 01 00:00:00 EDT 2016 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QEL16165· OSTI ID:22875601

Bogdanovich, M. V.; Kalinov, V. S.; Kostik, O. E.; Lantsov, K. I.; Lepchenkov, K. V.; Mashko, V. V.; Ryabtsev, A. G.; Ryabtsev, G. I.; Teplyashin, L. L. ^[1]

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1. B.I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, prosp. Nezavisimosty 68, 220072 Minsk (Belarus)

A Q-switched Nd : YAG laser with a high-power transverse diode pumping and injection of seed radiation generated by a single-frequency semiconductor laser is described. The threshold seed radiation power at which the Q-switched Nd : YAG switches to the single-frequency mode is 0.44 mW (radiation intensity 5.6×10{sup −2} W cm{sup −2}). With increasing injection power, the spectral and power characteristics of the Q-switched laser almost do not change at a constant excitation of its active medium. The spectral linewidth of the Q-switched Nd : YAG laser with injection from a TLD-1060-14BF single-frequency semiconductor laser module does not exceed 90 MHz (wavelength 1064 nm). (paper)

• OSTI ID: 22875601
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 46, Issue 10; Other Information: Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
EXCITATION
LINE WIDTHS
NEODYMIUM LASERS
PUMPING
SEMICONDUCTOR MATERIALS
WAVELENGTHS