Effect of reaction time on the dielectric behaviour of reduced graphene oxide–layered cobalt hydroxide composite for high-k gate dielectrics
Highlights: • Disc-like layered cobalt hydroxide microparticles were synthesized on reduced graphene oxide using one-pot hydrothermal method. • An enhanced dielectric constant of 7.19 × 10{sup 6} with a capacitance of 2.44 × 10{sup −6} F was achieved at 100 Hz frequency. • A leakage current of a few mA was produced in the composites that find potential applications in high-k gate dielectrics. - Abstract: Reduced graphene oxide (RGO)–cobalt hydroxide [Co(OH){sub 2}] composite was synthesized using one-pot hydrothermal method. The frequency-dependent dielectric properties and leakage conduction mechanism were studied for the composite. Samples were made with different reaction times of 2, 4, 6 and 12 h for the same concentration of graphene oxide and cobalt nitrate at constant temperature and pH. A high dielectric constant of 7.19 × 10{sup 6} with a capacitance of 2.45 × 10{sup −6} F was achieved for a reaction time of 2 h, at 100 Hz frequency and 27 °C temperature. One order decrement in the dielectric constant (10{sup 5}) was found with an increase in time starting from 4 to 12 h. The leakage current characteristics revealed Schottky barrier-type conduction mechanism in the composites. Thus, RGO-Co(OH){sub 2} composite with a high dielectric constant, microcapacitance and large leakage current could be regarded as a potential high-k candidate, which has its application as a gate dielectric material in the fabrication of metal oxide semiconductor field effect transistor.
- OSTI ID:
- 22805113
- Journal Information:
- Materials Research Bulletin, Vol. 100; Other Information: Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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