Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001)

Journal Article · Tue Aug 15 00:00:00 EDT 2017 · Semiconductors

DOI:https://doi.org/10.1134/S1063782617080073· OSTI ID:22756417

Usachov, D. Yu. ^[1]; Lebedev, S. P.; Smirnov, A. N.; Levitskii, V. S.; Eliseyev, I. A.; Alekseev, P. A.; Dunaevskiy, M. S. ^[2]; Vilkov, O. Yu.; Rybkin, A. G. ^[1]; Lebedev, A. A. ^[2]

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1. Saint Petersburg State University (Russian Federation)
2. Russian Academy of Sciences, Ioffe Institute (Russian Federation)

The structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6H-SiC substrate in an argon environment are studied by Raman spectroscopy, atomic-force microscopy, the low-energy electron diffraction method, X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy and X-ray absorption spectroscopy at the carbon K edge. It is shown that the results of a systematic integrated study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films with a small fraction of bilayer graphene inclusions.

• OSTI ID: 22756417
• Journal Information: Semiconductors, Vol. 51, Issue 8; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABLATION
ABSORPTION SPECTROSCOPY
ATOMIC FORCE MICROSCOPY
CRYSTAL GROWTH
DIFFRACTION METHODS
ELECTRON DIFFRACTION
ELECTRONIC STRUCTURE
FILMS
GRAPHENE
RAMAN SPECTROSCOPY
X-RAY PHOTOELECTRON SPECTROSCOPY