Hopping conductivity and dielectric relaxation in Schottky barriers on GaN
- Ioffe Institute (Russian Federation)
- Peter the Great St. Petersburg Polytechnic University (Russian Federation)
- St. Petersburg State University (Russian Federation)
- Financial University under the Government of the Russian Federation (Russian Federation)
A study of the current and capacitance dependences on the forward voltage in Au/n-GaN Schottky diodes, the sub-band optical absorption spectra, and the defect photoluminescence in n-GaN bulk crystals and thin layers is reported. It is shown that defect-assisted tunneling is the dominant transport mechanism for forward-biased Schottky contacts on n-GaN. The dependences of the current and capacitance on forward bias reflect the energy spectrum of defects in the band gap of n-GaN: the rise in the density of deep states responsible for yellow photoluminescence in GaN with increasing energy and the steep exponential tail of states with an Urbach energy of E{sub U} = 50 meV near the conduction-band edge. A decrease in the frequency of electron hops near the Au/n-GaN interface results in a wide distribution of local dielectric relaxation times and in a dramatic transformation of the electric-field distribution in the space-charge region under forward biases.
- OSTI ID:
- 22756381
- Journal Information:
- Semiconductors, Vol. 51, Issue 9; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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