MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate

Journal Article · Wed Nov 15 00:00:00 EST 2017 · Semiconductors

DOI:https://doi.org/10.1134/S1063782617110252· OSTI ID:22756253

Kotlyar, K. P.; Shtrom, I. V.; Soshnikov, I. P. ^[1]; Kukushkin, S. A.; Osipov, A. V. ^[2]; Cirlin, G. E. ^[1]

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1. Russian Academy of Sciences, St. Petersburg Academic University (Russian Federation)
2. Russian Academy of Science, Institute of Problems of Mechanical Engineering (Russian Federation)

The possibility in principle of growing III–V GaAs, AlGaAs, and InAs nanowires (NWs) on a silicon substrate with a nanometer buffer layer of silicon carbide is demonstrated for the first time. The diameter of these NWs is smaller than that of similar NWs grown on a silicon substrate. In particular, the minimum diameter is less than 10 nm for InAs NWs. In addition, it was assumed on the basis of photoluminescence measurements that, when AlGaAs NWs are grown on these substrates, a complex structure is formed due to the self-organized formation of AlGaAs quantum dots with a lower content of aluminum, embedded in the NWs.

• OSTI ID: 22756253
• Journal Information: Semiconductors, Vol. 51, Issue 11; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CRYSTAL GROWTH
GALLIUM ARSENIDES
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
NANOWIRES
QUANTUM DOTS
SILICON CARBIDES
SUBSTRATES