Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy

Journal Article · Sun Apr 15 00:00:00 EDT 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618040206· OSTI ID:22749998

Kalyuzhnyy, N. A.; Mintairov, S. A.; Belyaev, K. G.; Rakhlin, M. V.; Toropov, A. A.; Brunkov, P.; Vlasov, A. S. ^[1]; Merz, J.; Rouvimov, S. ^[2]; Oktyabrsky, S.; Yakimov, M. ^[3]; Mukhin, I. V. ^[4]; Shelaev, A. V.; Bykov, V. A. ^[5]; Romanova, A. Yu.; Buryak, P. A. ^[6]; Mintairov, A. M. ^[1]

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1. Ioffe Institute (Russian Federation)
2. University of Notre Dame (United States)
3. State University of New York at Albany, Institute for Materials (United States)
4. St. Petersburg Academic University (Russian Federation)
5. NT-MDT Spectrum Instruments (Russian Federation)
6. St. Petersburg Polytechnical University (Russian Federation)

We investigated structural and emission properties of self-organized InP/GaInP quantum dots (QD) grown by metal organic chemical vapor deposition using an amount of deposited In from 7 to 2 monolayers (ML). In the uncapped samples, using atomic force microscopy (AFM), we observed lateral sizes of 100–200 nm, together with a bimodal height distribution having maxima at ∼5 and ∼15 nm, which we denoted as QDs of type A and B, respectively; and reduction of the density of the type-B dots from 4.4 to 1.6 μm{sup –2}. The reduction of the density of B-type dots were observed also using transmission electron microscopy of the capped samples. Using single dot low-temperature photoluminescence (PL) spectroscopy we demonstrated effects of Wigner localization for the electrons accumulated in these dots.

• OSTI ID: 22749998
• Journal Information: Semiconductors, Vol. 52, Issue 4; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
CHEMICAL VAPOR DEPOSITION
INDIUM PHOSPHIDES
ORGANOMETALLIC COMPOUNDS
QUANTUM DOTS
TEMPERATURE RANGE 0065-0273 K
TRANSMISSION ELECTRON MICROSCOPY
VAPOR PHASE EPITAXY