Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K
- Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
- Microsensor Technology (Russian Federation)
- ITMO University (Russian Federation)
The electroluminescence of InAs/InAsSbP and InAsSb/InAsSbP LED heterostructures grown on InAs substrates is studied in the temperature range T = 4.2–300 K. At low temperatures (T = 4.2–100 K), stimulated emission is observed for the InAs/InAsSbP and InAsSb/InAsSbP heterostructures with an optical cavity formed normal to the growth plane at wavelengths of, respectively, 3.03 and 3.55 μm. The emission becomes spontaneous at T > 70 K due to the resonant “switch-on” of the CHHS Auger recombination process in which the energy of a recombining electron–hole pair is transferred to a hole, with hole transition to the spin–orbit-split band. It remains spontaneous up to room temperature because of the influence exerted by other Auger processes. The results obtained show that InAs/InAs(Sb)/InAsSbP structures are promising for the fabrication of vertically emitting mid-IR lasers.
- OSTI ID:
- 22649643
- Journal Information:
- Semiconductors, Vol. 51, Issue 2; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ELECTROLUMINESCENCE
ELECTRONS
HETEROJUNCTIONS
HOLES
INDIUM ANTIMONIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LASER MATERIALS
RECOMBINATION
STIMULATED EMISSION
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K