Coherent spin dynamics of carriers in ferromagnetic semiconductor heterostructures with an Mn δ layer
- Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
- Technische Universität Dortmund, Experimentelle Physik 2 (Germany)
- Lobachevskii State University, Nizhny Novgorod Research Physicotechnical Institute (Russian Federation)
The coherent spin dynamics of carriers in the heterostructures that contain an InGaAs/GaAs quantum well (QW) and an Mn δ layer, which are separated by a narrow GaAs spacer 2–10 nm thick, is comprehensively studied by the magnetooptical Kerr effect method at a picosecond time resolution. The exchange interaction of photoexcited electrons in QW with the ferromagnetic Mn δ layer manifests itself in magnetic-field and temperature dependences of the Larmor precession frequency of electron spins and is found to be very weak (several microelectron volts). Two nonoscillating components related to holes exist apart from an electron contribution to the Kerr signal of polarization plane rotation. At the initial stage, a fast relaxation process, which corresponds to the spin relaxation of free photoexcited holes, is detected in the structures with a wide spacer. The second component is caused by the further spin dephasing of energyrelaxed holes, which are localized at strong QW potential fluctuations in the structures under study. The decay of all contributions to the Kerr signal in time increases substantially when the spacer thickness decreases, which correlates with the enhancement of nonradiative recombination in QW.
- OSTI ID:
- 22617187
- Journal Information:
- Journal of Experimental and Theoretical Physics, Vol. 123, Issue 3; Other Information: Copyright (c) 2016 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7761
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIERS
ELECTRONS
EXCHANGE INTERACTIONS
FLUCTUATIONS
GALLIUM ARSENIDES
HOLES
INDIUM COMPOUNDS
KERR EFFECT
LARMOR PRECESSION
LAYERS
MAGNETIC FIELDS
POLARIZATION
QUANTUM WELLS
RECOMBINATION
RELAXATION
SPIN
TEMPERATURE DEPENDENCE
THICKNESS
TIME RESOLUTION