Role of the inversion layer on the charge injection in silicon nanocrystal multilayered light emitting devices

Journal Article · Wed Sep 07 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4961873· OSTI ID:22598804

Tondini, S. ^[1]; Pucker, G. ^[2]; Pavesi, L. ^[1]

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1. Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38123 Trento (Italy)
2. Advanced Photonics and Photovoltaics Group, Bruno Kessler Foundation, Via Sommarive 18, 38123 Trento (Italy)

The role of the inversion layer on injection and recombination phenomena in light emitting diodes (LEDs) is here studied on a multilayer (ML) structure of silicon nanocrystals (Si-NCs) embedded in SiO{sub 2}. Two Si-NC LEDs, which are similar for the active material but different in the fabrication process, elucidate the role of the non-radiative recombination rates at the ML/substrate interface. By studying current- and capacitance-voltage characteristics as well as electroluminescence spectra and time-resolved electroluminescence under pulsed and alternating bias pumping scheme in both the devices, we are able to ascribe the different experimental results to an efficient or inefficient minority carrier (electron) supply by the p-type substrate in the metal oxide semiconductor LEDs.

• OSTI ID: 22598804
• Journal Information: Journal of Applied Physics, Vol. 120, Issue 9; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CAPACITANCE
ELECTRIC POTENTIAL
ELECTROLUMINESCENCE
INJECTION
LAYERS
LIGHT EMITTING DIODES
METALS
NANOSTRUCTURES
P-TYPE CONDUCTORS
RECOMBINATION
SILICA
SILICON
SILICON OXIDES
SUBSTRATES
TIME RESOLUTION