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Title: Isochronal annealing effects on local structure, crystalline fraction, and undamaged region size of radiation damage in Ga-stabilized δ-Pu

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4958856· OSTI ID:22597827
 [1];  [2];  [3]; ;  [4]; ; ;  [5]
  1. Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
  2. Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
  3. Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
  4. Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
  5. Materials Science Division, Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)

The effects on the local structure due to self-irradiation damage of Ga stabilized δ-Pu stored at cryogenic temperatures have been examined using extended x-ray absorption fine structure (EXAFS) experiments. Extensive damage, seen as a loss of local order, was evident after 72 days of storage below 15 K. The effect was observed from both the Pu and the Ga sites, although less pronounced around Ga. Isochronal annealing was performed on this sample to study the annealing processes that occur between cryogenic and room temperature storage conditions, where damage is mostly reversed. Damage fractions at various points along the annealing curve have been determined using an amplitude-ratio method, a standard EXAFS fitting, and a spherical crystallite model, and provide information complementary to the previous electrical resistivity- and susceptibility-based isochronal annealing studies. The use of a spherical crystallite model accounts for the changes in EXAFS spectra using just two parameters, namely, the crystalline fraction and the particle radius. Together, these results are discussed in terms of changes to the local structure around Ga and Pu throughout the annealing process and highlight the unusual role of Ga in the behavior of the lowest temperature anneals.

OSTI ID:
22597827
Journal Information:
Journal of Applied Physics, Vol. 120, Issue 3; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English

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