Temperature dependence of the photoluminescence polarization of ordered III-V semiconductor alloys
- Instituto de Ciencias, BUAP, Privada 17 Norte, No 3417, col. San Miguel Huyeotlipan, 72050 Puebla, Pue. (Mexico)
- IMEM/CNR, Parco Area delle Scienze 37/A, 43010 Parma (Italy)
We studied the linear polarization of the photoluminescence (PL) emission of atomically ordered GaInAsP and GaInP alloys with different ordering parameters in the temperature range from 10 to 300 K. The epitaxial layers of these alloys were grown on GaAs and Ge (001) substrates by metal organic vapor phase epitaxy. The polarization of the PL emission propagating along different crystallographic axes depends on the value of biaxial strain in the layer and changes with temperature. We calculated the PL polarization patterns for different propagation directions as a function of biaxial strain using an existing model developed for ternary atomically ordered III-V alloys. Comparing the calculated PL polarization patterns with those obtained experimentally, we separated the variation of the PL polarization due to change of biaxial strain with temperature.
- OSTI ID:
- 22596925
- Journal Information:
- Journal of Applied Physics, Vol. 119, Issue 11; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
COMPARATIVE EVALUATIONS
CRYSTALLOGRAPHY
GALLIUM ALLOYS
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
INDIUM ALLOYS
INDIUM PHOSPHIDES
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
POLARIZATION
SEMICONDUCTOR MATERIALS
STRAINS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
VAPOR PHASE EPITAXY
VAPORS