Theoretical evaluation of two dimensional electron gas characteristics of quaternary Al{sub x}In{sub y}Ga{sub 1–x–y}N/GaN hetero-junctions

Journal Article · Thu Apr 21 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4946842· OSTI ID:22594623

Rahbardar Mojaver, Hassan; Manouchehri, Farzin; Valizadeh, Pouya ^[1]

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1. Department of Electrical and Computer Engineering, Concordia University, Montreal, Quebec H3G-1M8 (Canada)

The two dimensional electron gas (2DEG) characteristics of gated metal-face wurtzite AlInGaN/GaN hetero-junctions including positions of subband energy levels, fermi energy level, and the 2DEG concentration as functions of physical and compositional properties of the hetero-junction (i.e., barrier thickness and metal mole-fractions) are theoretically evaluated using the variational method. The calculated values of the 2DEG concentration are in good agreement with the sparsely available experimental data reported in the literature. According to our simulation results, a considerable shift in the positive direction of threshold voltage of AlInGaN/GaN hetero-junction field-effect transistors can be achieved by engineering both the spontaneous and the piezoelectric polarizations using a quaternary AlInGaN barrier-layer of appropriate mole-fractions.

• OSTI ID: 22594623
• Journal Information: Journal of Applied Physics, Vol. 119, Issue 15; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COMPUTERIZED SIMULATION
CONCENTRATION RATIO
CONNECTORS
DEPLETION LAYER
ELECTRIC CONTACTS
ELECTRIC POTENTIAL
ELECTRON GAS
ELECTRONS
FIELD EFFECT TRANSISTORS
GALLIUM NITRIDES
HETEROJUNCTIONS
JOINTS
METALS
PIEZOELECTRICITY
POLARIZATION
THICKNESS
TWO-DIMENSIONAL CALCULATIONS
VARIATIONAL METHODS
YTTRIUM NITRIDES