High performance InGaAs/GaAsSb terahertz quantum cascade lasers operating up to 142 K

Journal Article · Mon Nov 19 00:00:00 EST 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4766915· OSTI ID:22594495

Krall, M.; Brandstetter, M.; Unterrainer, K. ^[1]; Detz, H.; Andrews, A. M.; Klang, P.; Schrenk, W.; Strasser, G. ^[2]

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1. Photonics Institute and Center for Micro- and Nanostructures, Technische Universität Wien, Gusshausstrasse 27-29, 1040 Vienna (Austria)
2. Institute for Solid State Electronics and Center for Micro- and Nanostructures, Technische Universität Wien, Floragasse 7, 1040 Vienna (Austria)

We report on the demonstration of a maximum operating temperature of 142 K for InGaAs-based terahertz quantum cascade lasers. This result is achieved by using the alternative material combination In{sub 0.53}Ga{sub 0.47}As/GaAs{sub 0.51}Sb{sub 0.49}, lattice-matched to InP, which exhibits fabrication advantages over standard In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As due to more suitable material parameters. An active region, based on a three-well phonon depletion design, with improved injection and extraction tunneling coupling, was designed. The devices exhibit threshold current densities of 0.75 kA/cm{sup 2} and provide peak optical powers up to 9 mW. A broad spectral emission range between 3.3 and 4 THz is measured.

• OSTI ID: 22594495
• Journal Information: Applied Physics Letters, Vol. 101, Issue 21; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COUPLING
CURRENT DENSITY
FABRICATION
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LASERS
PERFORMANCE
PHONONS
TEMPERATURE RANGE 0065-0273 K
THRESHOLD CURRENT
TUNNEL EFFECT