On the ideality factor of the radiative recombination current in semiconductor light-emitting diodes

Journal Article · Mon Jul 18 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4959081· OSTI ID:22594462

Lee, Gyeong Won ^[1]; Shim, Jong-In ^[2]; Shin, Dong-Soo ^[1]

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1. Department of Bionanotechnology, Hanyang University, ERICA Campus, Ansan, Gyeonggi-do 426-791 (Korea, Republic of)
2. Department of Electronics and Communication Engineering, Hanyang University, ERICA Campus, Ansan, Gyeonggi-do 426-791 (Korea, Republic of)

While there have been many discussions on the standard Si pn-diodes, little attention has been paid and confusion still arises on the ideality factor of the radiative recombination current in semiconductor light-emitting diodes (LEDs). In this letter, we theoretically demonstrate and experimentally confirm by using blue and infrared semiconductor LEDs that the ideality factor of the radiative recombination current is unity especially for low-current-density ranges. We utilize the data of internal quantum efficiency measured by the temperature-dependent electroluminescence to separate the radiative current component from the total current.

• OSTI ID: 22594462
• Journal Information: Applied Physics Letters, Vol. 109, Issue 3; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CURRENT DENSITY
CURRENTS
ELECTROLUMINESCENCE
LIGHT EMITTING DIODES
QUANTUM EFFICIENCY
RECOMBINATION
SEMICONDUCTOR MATERIALS
SILICON
SILICON DIODES
TEMPERATURE DEPENDENCE