Determination of band offsets at GaN/single-layer MoS{sub 2} heterojunction

Journal Article · Mon Jul 18 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4959254· OSTI ID:22594419

Tangi, Malleswararao; Mishra, Pawan; Ng, Tien Khee; Janjua, Bilal; Alias, Mohd Sharizal; Hedhili, Mohamed Nejib; Anjum, Dalaver H. ^[1]; Tseng, Chien-Chih; Shi, Yumeng; Li, Lain-Jong ^[2]; Joyce, Hannah J. ^[3]

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1. Adavanced Nanofabrication Imaging and Characterization, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia)
2. Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia)
3. Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge, Cambridgeshire CB3 0FA (United Kingdom)

We report the band alignment parameters of the GaN/single-layer (SL) MoS{sub 2} heterostructure where the GaN thin layer is grown by molecular beam epitaxy on CVD deposited SL-MoS{sub 2}/c-sapphire. We confirm that the MoS{sub 2} is an SL by measuring the separation and position of room temperature micro-Raman E{sup 1}{sub 2g} and A{sup 1}{sub g} modes, absorbance, and micro-photoluminescence bandgap studies. This is in good agreement with HRTEM cross-sectional analysis. The determination of band offset parameters at the GaN/SL-MoS{sub 2} heterojunction is carried out by high-resolution X-ray photoelectron spectroscopy accompanying with electronic bandgap values of SL-MoS{sub 2} and GaN. The valence band and conduction band offset values are, respectively, measured to be 1.86 ± 0.08 and 0.56 ± 0.1 eV with type II band alignment. The determination of these unprecedented band offset parameters opens up a way to integrate 3D group III nitride materials with 2D transition metal dichalcogenide layers for designing and modeling of their heterojunction based electronic and photonic devices.

• OSTI ID: 22594419
• Journal Information: Applied Physics Letters, Vol. 109, Issue 3; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHEMICAL VAPOR DEPOSITION
COMPUTERIZED SIMULATION
GALLIUM NITRIDES
HETEROJUNCTIONS
LAYERS
MOLECULAR BEAM EPITAXY
MOLECULAR BEAMS
MOLYBDENUM SULFIDES
PHOTOLUMINESCENCE
RAMAN EFFECT
SAPPHIRE
SILICON OXIDES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
THREE-DIMENSIONAL CALCULATIONS
TRANSITION ELEMENTS
TRANSMISSION ELECTRON MICROSCOPY
TWO-DIMENSIONAL CALCULATIONS
VALENCE
X-RAY PHOTOELECTRON SPECTROSCOPY