Chemical-free n-type and p-type multilayer-graphene transistors

Journal Article · Mon Aug 01 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4960530· OSTI ID:22594329

Eisaman, M. D. ^[1]

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1. Sustainable Energy Technologies Department, Brookhaven National Laboratory, Upton, New York 11973 (United States)

A single-step doping method to fabricate n- and p-type multilayer graphene (MG) top-gate field effect transistors (GFETs) is demonstrated. The transistors are fabricated on soda-lime glass substrates, with the n-type doping of MG caused by the sodium in the substrate without the addition of external chemicals. Placing a hydrogen silsesquioxane (HSQ) barrier layer between the MG and the substrate blocks the n-doping, resulting in p-type doping of the MG above regions patterned with HSQ. The HSQ is deposited in a single fabrication step using electron beam lithography, allowing the patterning of arbitrary sub-micron spatial patterns of n- and p-type doping. When a MG channel is deposited partially on the barrier and partially on the glass substrate, a p-type and n-type doping profile is created, which is used for fabricating complementary transistors pairs. Unlike chemically doped GFETs in which the external dopants are typically introduced from the top, these substrate doped GFETs allow for a top gate which gives a stronger electrostatic coupling to the channel, reducing the operating gate bias. Overall, this method enables scalable fabrication of n- and p-type complementary top-gated GFETs with high spatial resolution for graphene microelectronic applications.

• OSTI ID: 22594329
• Journal Information: Applied Physics Letters, Vol. 109, Issue 5; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
COUPLING
DEPLETION LAYER
DEPOSITS
DOPED MATERIALS
ELECTRON BEAMS
FABRICATION
FIELD EFFECT TRANSISTORS
GLASS
GRAPHENE
HYDROGEN
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
SODIUM
SODIUM CARBONATES
SPATIAL RESOLUTION
SUBSTRATES