High temperature Raman investigation of few-layer MoTe{sub 2}
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China)
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)
We present a Raman investigation of the temperature effect of single and few layer MoTe{sub 2} at an electronic device working temperature range from 300 K to 500 K. We observe linear frequency red-shifts with increasing temperature for the first order Raman active E{sup 1}{sub 2g}, A{sub 1g}, Raman inactive B{sup 1}{sub 2g} mode, and the second order ω{sub 2} mode, which can be attributed to the anharmonic effect of the interatomic potential energy. The temperature coefficients of the out-of-plane vibrational B{sup 1}{sub 2g} modes and inplane vibrational E{sup 1}{sub 2g} modes are similarly around −0.013 cm{sup −1}/K, while lower than that of out-of-plane vibration A{sub 1g} mode at −0.009 cm{sup −1}/K. The temperature coefficient of ω{sub 2} mode is −0.00521 cm{sup −1}/K, approximately half of those of the first order modes, and the temperature coefficient of transverse acoustic TA (M) mode is indirectly deduced as −0.0102 cm{sup −1}/K, which shows the corresponding Mo-Te stretching bonds of TA (M) mode behavior similarly to those of optical Raman vibrations. Our work thus provides temperature dependent lattice vibration information of MoTe{sub 2} and could be potentially useful in future optoelectronic devices based on MoTe{sub 2} related two dimensional materials.
- OSTI ID:
- 22591759
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 9; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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