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Title: A low-temperature study of manganese-induced ferromagnetism and valence band convergence in tin telluride

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4948523· OSTI ID:22591669
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  1. Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)
  2. Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States)
  3. Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973 (United States)

SnTe is renowned for its promise in advancing energy-related technologies based on thermoelectricity and for its topological crystalline insulator character. Here, we demonstrate that each Mn atom introduces ∼4 μ{sub B} (Bohr magneton) of magnetic moment to Sn{sub 1−x}Mn{sub x}Te. The Curie temperature T{sub C} reaches ∼14 K for x = 0.12, as observed in the field dependent hysteresis of magnetization and the anomalous Hall effect. In accordance with a modified two-band electronic Kane model, the light L-valence-band and the heavy Σ-valence-band gradually converge in energy with increasing Mn concentration, leading to a decreasing ordinary Hall coefficient R{sub H} and a favorably enhanced Seebeck coefficient S at the same time. With the thermal conductivity κ lowered chiefly via point defects associated with the incorporation of Mn, the strategy of Mn doping also bodes well for efficient thermoelectric applications at elevated temperatures.

OSTI ID:
22591669
Journal Information:
Applied Physics Letters, Vol. 108, Issue 18; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English

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