Erratum: “Electroluminescence from metal-oxide-semiconductor devices with erbium-doped CeO{sub 2} films on silicon” [Appl. Phys. Lett. 106, 141102 (2015)]
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)
No abstract prepared.
- OSTI ID:
- 22591621
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 16; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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