Enhanced photoresponsivity in graphene-silicon slow-light photonic crystal waveguides

Journal Article · Mon Mar 14 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4944414· OSTI ID:22591431

Zhou, Hao ^[1]; Gu, Tingyi; McMillan, James F. ^[2]; Yu, Mingbin; Lo, Guoqiang; Kwong, Dim-Lee ^[3]; Feng, Guoying; Zhou, Shouhuan ^[1]

---

1. College of Electronics and Information Engineering, Sichuan University, Chengdu 610065 (China)
2. Optical Nanostructures Laboratory, Columbia University, New York, New York 10027 (United States)
3. Institute of Microelectronics, Singapore, Singapore 117685 (Singapore)

We demonstrate the enhanced fast photoresponsivity in graphene hybrid structures by combining the ultrafast dynamics of graphene with improved light-matter interactions in slow-light photonic crystal waveguides. With a 200 μm interaction length, a 0.8 mA/W photoresponsivity is achieved in a graphene-silicon Schottky-like photodetector, with an operating bandwidth in excess of 5 GHz and wavelength range at least from 1480 nm to 1580 nm. Fourfold enhancement of the photocurrent is observed in the slow light region, compared to the wavelength far from the photonic crystal bandedge, for a chip-scale broadband fast photodetector.

• OSTI ID: 22591431
• Journal Information: Applied Physics Letters, Vol. 108, Issue 11; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CRYSTALS
GHZ RANGE
GRAPHENE
INTERACTIONS
LENGTH
MATTER
PHOTOCURRENTS
PHOTODETECTORS
SILICON
WAVEGUIDES
WAVELENGTHS