Type-II quantum wells with tensile-strained GaAsSb layers for interband cascade lasers with tailored valence band mixing
- Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, Wrocław 50-370 (Poland)
- Technische Physik, University of Würzburg, Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, Am Hubland, Würzburg D-97074 (Germany)
Optical properties of modified type II W-shaped quantum wells have been investigated with the aim to be utilized in interband cascade lasers. The results show that introducing a tensely strained GaAsSb layer, instead of a commonly used compressively strained GaInSb, allows employing the active transition involving valence band states with a significant admixture of the light holes. Theoretical predictions of multiband k·p theory have been experimentally verified by using photoluminescence and polarization dependent photoreflectance measurements. These results open a pathway for practical realization of mid-infrared lasing devices with uncommon polarization properties including, for instance, polarization-independent midinfrared light emitters.
- OSTI ID:
- 22591406
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 10; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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