Effect of annealing temperature on structure and electrical properties of topological insulator Bi{sub 2}Te{sub 3}

Journal Article · Fri May 06 00:00:00 EDT 2016 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4946262· OSTI ID:22591351

Urkude, R. R., E-mail: [e-mail]; Palikundwar, U. A., E-mail: [e-mail] ^[1]

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1. X-ray Research Laboratory, Department of Physics, Rashtrasant Tukadoji Maharaj Nagpur University, Nagpur-440033 (India)

Bi{sub 2}Te{sub 3} samples were prepared by precipitation method. The samples were annealed in evacuated quartz tubes and were treated at different temperature for different duration of time. Effects of annealing temperature and time on the structure of Bi{sub 2}Te{sub 3} were studied in detail. The Bi{sub 2}Te{sub 3} samples annealed at temperature 300°C and 450°C for 48Hrs, 72Hrs and 96Hrs were selected for the present study. The structure of Bi{sub 2}Te{sub 3} and related phases were investigated by the X-ray powder diffraction technique. Morphology and chemical compositions of the samples were investigated by scanning electron microscope and energy dispersive X-ray spectroscopy respectively. All the samples were indexed in rhombohedral crystal structure, with a space group R-3m. The structure consists of repeated quintuple layers of atoms, Te2-Bi-Te1-Bi-Te2 stacking along the z-axis of the unit cell. Electrical properties of the sample annealed at 300°C for 96Hrs was evaluated by measurements of the electrical resistivity and magnetoresistance. The magnetoresistance data at low temperature (1.5 to 50 K) were analyzed to investigate weak antilocalization (WAL) effect. MR data followed the Hikami–Larkin–Nagaoka (HLN) equation with a fit parameter α close to −1 as expected for topological surface states at 1.5 K, but for other temperatures the small oscillations were observed which may be due to the phenomena like Shubnikov-de Hass effect.

• OSTI ID: 22591351
• Journal Information: AIP Conference Proceedings, Vol. 1728, Issue 1; Conference: ICC 2015: International conference on condensed matter and applied physics, Bikaner (India), 30-31 Oct 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANNEALING
BISMUTH TELLURIDES
CHEMICAL COMPOSITION
CRYSTALS
LAYERS
MAGNETORESISTANCE
MORPHOLOGY
POWDERS
PRECIPITATION
QUARTZ
SCANNING ELECTRON MICROSCOPY
SHUBNIKOV-DE HAAS EFFECT
SURFACES
TEMPERATURE DEPENDENCE
TRIGONAL LATTICES
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY