Fabrication and characterization of metal–semiconductor–metal ultraviolet photodetector based on rutile TiO{sub 2} nanorod
- Nano-Optoelectronics Research and Technology Laboratory (N.O.R.), School of Physics, Universiti Sains Malaysia, Penang 11800 (Malaysia)
The fabrication and characterization of a metal–semiconductor–metal ultraviolet photodetector are studied. The photodetector is based on TiO{sub 2} nanorods (NRs) grown on p-type (1 1 1)-oriented silicon substrate seeded with a TiO{sub 2} layer is synthesized by radio frequency reactive magnetron sputtering. A chemical bath deposition is used to grow TiO{sub 2} NRs on Si substrate. The structural and optical properties of the obtained sample are analyzed by using X-ray diffraction and field emission-scanning electron microscopy. Results show a tetragonal rutile structure of the synthesized TiO{sub 2} NRs. Optical properties are further examined using photoluminescence spectroscopy. A sharp and high-intensity UV peak at 367 nm is observed in comparison with visible defect peaks centered at 432 and 718 nm. Upon exposure to 365 nm light (2.3 mW/cm) at 5 V bias, the device displays 76.06 × 10{sup 2} sensitivity, internal photodetector gain of 77.06, photocurrent of the device is 2.62 × 10{sup −5} A and photoresponse peak of 69.7 mA/W. The response and recovery times are calculated as 18.5 and 19.1 ms upon illumination to a pulse UV light (365 nm, 2.3 mW/cm{sup 2}) at 5 V applied bias. These results demonstrate that the fabricated high-quality photodiode is a promising candidate as a low-cost UV photodetector for commercially-integrated photoelectronic applications.
- OSTI ID:
- 22584245
- Journal Information:
- Materials Research Bulletin, Vol. 73; Other Information: Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
EMISSION SPECTROSCOPY
FIELD EMISSION
GAIN
LAYERS
METALS
NANOSTRUCTURES
OPTICAL PROPERTIES
PHOTOCURRENTS
PHOTODETECTORS
PHOTOLUMINESCENCE
RUTILE
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
TETRAGONAL LATTICES
TITANIUM OXIDES
ULTRAVIOLET RADIATION
VISIBLE RADIATION
X-RAY DIFFRACTION