Optical investigations of Be doped ZnO films grown by molecular beam epitaxy
- Faculty of Science, Jiangsu University, Zhenjiang, Jiangsu 212013 (China)
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China)
Highlights: • The optical properties of Be doped ZnO films were investigated. • Low temperature photoluminescence spectrum was dominated by D°X and DAP emissions. • Shallow acceptor state with ionization energy of 116 meV was found in ZnO:Be films. • It is suggested that the incorporated Be atom might favor formation of Zn vacancies defects. • This work demonstrates that N doping BeZnO might be suitable for fabricating reliable p-type ZnO materials. - Abstract: In this article, the optical properties of ZnO:Be films grown by plasma-assisted molecular beam epitaxy were investigated by the excitation density-dependent and temperature-dependent photoluminescence measurements. The low temperature photoluminescence spectra showed a dominant excitons bound to neutral donors (D°X) emission centered at 3.3540 eV and strong donor-acceptor pair (DAP) transitions at 3.3000 eV. In addition, it showed that the intensity ratio of the DAP and D°X peaks changed with background electron concentration. Furthermore, a shallow acceptor state with ionization energy of 116 meV was found and attributed to Zn vacancy. The present study further suggests that Be and N codoping ZnO might be suitable for fabricating reliable p-type ZnO materials.
- OSTI ID:
- 22581550
- Journal Information:
- Materials Research Bulletin, Vol. 78; Other Information: Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CONCENTRATION RATIO
DOPED MATERIALS
ELECTRONS
EMISSION SPECTRA
EXCITATION
EXCITONS
IONIZATION
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
P-TYPE CONDUCTORS
TEMPERATURE DEPENDENCE
THIN FILMS
VACANCIES
ZINC OXIDES