Application of cyclic fluorocarbon/argon discharges to device patterning
- IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 and Department of Materials Science and Engineering, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20740 (United States)
- IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
- Department of Physics, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20740 (United States)
- Department of Materials Science and Engineering, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20740 (United States)
With increasing demands on device patterning to achieve smaller critical dimensions and pitches for the 5 nm node and beyond, the need for atomic layer etching (ALE) is steadily increasing. In this work, a cyclic fluorocarbon/Ar plasma is successfully used for ALE patterning in a manufacturing scale reactor. Self-limited etching of silicon oxide is observed. The impact of various process parameters on the etch performance is established. The substrate temperature has been shown to play an especially significant role, with lower temperatures leading to higher selectivity and lower etch rates, but worse pattern fidelity. The cyclic ALE approach established with this work is shown to have great potential for small scale device patterning, showing self-limited etching, improved uniformity and resist mask performance.
- OSTI ID:
- 22489786
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 34, Issue 1; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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