Efficiency droop improvement in InGaN light-emitting diodes with graded InGaN barriers of increasing indium composition

Journal Article · Mon Sep 14 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4930155· OSTI ID:22489450

Cheng, Liwen; Wu, Shudong; Xia, Changquan; Chen, Haitao ^[1]

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1. College of Physics Science and Technology & Institute of Optoelectronic Technology, Yangzhou University, Yangzhou 225002 (China)

In this work, graded barrier InGaN light-emitting diodes with increasing indium composition barriers are proposed and investigated numerically. When the conventional GaN barriers are replaced by this unique graded InGaN barrier design, the forward voltage at 100 mA is reduced from 3.32 V to 3.27 V, and the efficiency droop is improved from 46.6% to 7.5%. The simulation results observed in this work indicate that these improvements can be attributed to increased electron confinement and enhanced hole injection efficiency caused by the modified energy band diagram.

• OSTI ID: 22489450
• Journal Information: Journal of Applied Physics, Vol. 118, Issue 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DESIGN
EFFICIENCY
ELECTRIC POTENTIAL
ELECTRONIC STRUCTURE
GALLIUM NITRIDES
HOLES
INDIUM
LIGHT EMITTING DIODES
SIMULATION