Fast gain and phase recovery of semiconductor optical amplifiers based on submonolayer quantum dots

Journal Article · Mon Nov 16 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4935792· OSTI ID:22486073

Herzog, Bastian; Owschimikow, Nina; Kaptan, Yücel; Kolarczik, Mirco; Switaiski, Thomas; Woggon, Ulrike ^[1]; Schulze, Jan-Hindrik; Rosales, Ricardo; Strittmatter, André; Bimberg, Dieter; Pohl, Udo W. ^[2]

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1. Institut für Optik und Atomare Physik, Technische Universität Berlin, Straße des 17. Juni 135, 10623 Berlin (Germany)
2. Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)

Submonolayer quantum dots as active medium in opto-electronic devices promise to combine the high density of states of quantum wells with the fast recovery dynamics of self-assembled quantum dots. We investigate the gain and phase recovery dynamics of a semiconductor optical amplifier based on InAs submonolayer quantum dots in the regime of linear operation by one- and two-color heterodyne pump-probe spectroscopy. We find an as fast recovery dynamics as for quantum dot-in-a-well structures, reaching 2 ps at moderate injection currents. The effective quantum well embedding the submonolayer quantum dots acts as a fast and efficient carrier reservoir.

• OSTI ID: 22486073
• Journal Information: Applied Physics Letters, Vol. 107, Issue 20; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
AMPLIFIERS
CARRIERS
COLOR
CURRENTS
DENSITY OF STATES
GAIN
INDIUM ARSENIDES
QUANTUM DOTS
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
TRITIUM RECOVERY