Fabrication of ion conductive tin oxide-phosphate amorphous thin films by atomic layer deposition
This work reports the atomic layer deposition (ALD) of tin oxide-phosphate films using tetrakis(dimethylamino)tin and trimethyl phosphate as precursors. The growth rates were 1.23–1.84 Å/cycle depending upon the deposition temperature and precursor combination. The ionic conductivity of the ALD tin oxide-phosphate films was evaluated by cross-plane impedance measurements in the temperature range of 50–300 °C under atmospheric air, with the highest conductivity measured as 1.92 × 10{sup −5} S cm{sup −1} at 300 °C. Furthermore, high-resolution x-ray photoelectron spectroscopy exhibited two O1s peaks that were classified as two subpeaks of hydroxyl ions and oxygen ions, revealing that the quantity of hydroxyl ions in the ALD tin oxide-phosphate films influences their ionic conductivity.
- OSTI ID:
- 22479708
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 33, Issue 4; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
Similar Records
Incomplete elimination of precursor ligands during atomic layer deposition of zinc-oxide, tin-oxide, and zinc-tin-oxide
Growth behavior and properties of atomic layer deposited tin oxide on silicon from novel tin(II)acetylacetonate precursor and ozone